| Ident. | Authors (with country if any) | Title |
|---|
| 000230 |
| Recent developments in the III-nitride materials |
| 000280 |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000357 |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000358 |
| Optical properties of InN related to surface plasmons |
| 000415 |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000454 |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000464 |
| Mie resonances, infrared emission, and the band gap of InN |
| 000492 |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000512 |
| Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot |
| 000679 |
| Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation |
| 000707 |
| Acceptor-induced threshold energy for the optical charging of InAs single quantum dots |
| 000D39 |
| Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions |
